In today’s increasingly intense global competition, high-end RF chips have become the core of modern communication systems, directly affecting the communication quality and efficiency of mobile devices, base stations, and even defense equipment. However, this field has long faced technological barriers and supply risks. Against this backdrop, China has made a key step toward self-reliance in high-end RF chips—Haiwei Huaxin, a subsidiary of Haitai High-tech Holdings, has officially launched its gallium arsenide production line. This breakthrough marks China’s first large-scale commercial production capacity for gallium arsenide RF chips.

The newly launched production line is the first 6-inch compound semiconductor mass production line in China. It covers gallium arsenide 0.25μm power amplifier circuit processes and passive integrated circuit processes, with overall technical specifications reaching the advanced domestic industry level. Compound semiconductors, such as gallium arsenide and gallium nitride, are considered the “jewels of the semiconductor field.” They are ideal materials for high-frequency, high-efficiency, and low-noise RF chips, and are widely used in 5G communications, satellite communications, optical communications, and new energy sectors. The establishment of Haiwei Huaxin’s production line not only fills the domestic gap in high-end RF chip manufacturing but also provides strong support for national information industry supply chain security.

Key Breakthroughs in Gallium Arsenide RF Chip Production

This production line is capable of producing both gallium nitride and high-end optoelectronic chips, creating a diversified process layout. As global demand for high-performance RF chips continues to rise since 2024, Haiwei Huaxin is expected to achieve the mass production of China’s first domestically made second-generation/third-generation gallium arsenide RF chips by 2025, further consolidating China’s influence in the high-end RF chip industry chain.

From a global perspective, the compound semiconductor industry is moving toward larger sizes and higher integration. Haiwei Huaxin’s 6-inch production line has now entered the international advanced ranks, laying the foundation for China’s participation in global competition in the RF chip market. Meanwhile, third-generation semiconductor materials such as AlGaN and GaN are evolving, offering wider bandwidth and higher insulation resistance characteristics. These materials are expected to complement gallium arsenide technology and push RF chips toward higher frequency bands and greater power density in the future.

China’s Growing Influence in the Global RF Chip Market

As domestic companies like Haiwei Huaxin continue to make breakthroughs in materials, processes, and design, China’s self-research and manufacturing capabilities for high-end RF chips will continue to improve. This will provide a solid hardware foundation for China’s communication industry to transition from “catching up” to “keeping pace” and even “leading” the global market.